all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 9 rev. 02.2, 2015-07-14 PXAC192908FV thermally-enhanced high power rf ldmos fet 240 w, 28 v, 1930 C 1995 mhz description the PXAC192908FV is a 240-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1930 to 1995 mhz frequency band. features include dual-path design, high gain and thermally-enhanced package with earless fanges. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. PXAC192908FV package h-37275g-6/2 rf characteristics single-carrier wcdma specifcations (tested in infneon doherty test fxture) v dd = 28 v, i dq = 0.6 a, v gs(peak) = 0.55 v, p out = 70 w avg, ? 1 = 1990 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 13 14 db drain effciency h d 45 49 % adjacent channel power ratio acpr C28 C25 dbc features ? broadband internal input and output matching ? asymmetric doherty design - main: p 1db = 120 w typ - peak: p 1db = 220 w typ ? typical pulsed cw performance, 1990 mhz, 28 v, combined outputs - output power at p 1db = 240 w - effciency = 54% - gain = 14 db ? capable of handling 10:1 vswr @28 v, 240 w (cw) output power ? integrated esd protection ? human body model, class 2 (per ansi/esda/ jedec js-001) ? low thermal resistance ? pb-free and rohs compliant -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 600 ma, ? = 1990 mhz, 3gpp wcdma signal, par = 10 db, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c192908fc_g1
data sheet 2 of 9 rev. 02.2, 2015-07-14 PXAC192908FV dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.11 w (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.06 w operating gate voltage (main) v ds = 28 v, i dq = 0.6 a v gs 2.5 2.65 2.75 v (peak) v ds = 28 v, i dq = 0 a v gs 0.45 0.55 0.75 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (doherty, t case = 70c, 200 w cw, 1960 mhz, r qjc 0.32 c/w 28v, i dq (main) = 600 ma, v gs (peak) = 0.55 v) ordering information type and version order code package description shipping PXAC192908FV v1 PXAC192908FVv1xwsa1 h-37275g-6/2, earless fange tray PXAC192908FV v1 r250 PXAC192908FVv1r250xtma1 h-37275g-6/2, earless fange tape & reel, 250 pcs
PXAC192908FV data sheet 3 of 9 rev. 02.2, 2015-07-14 typical performance (data taken in a production doherty test fxture) 5 15 25 35 45 55 10 12 14 16 18 20 1750 1850 1950 2050 2150 efficiency (%) gain (db) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 600 ma, p out = 48.45dbm, 3gpp wcdma signal, par = 10 db efficiency gain c192908fc_g2 -35 -30 -25 -20 -15 -10 -5 -40 -35 -30 -25 -20 -15 -10 1750 1850 1950 2050 2150 return loss (db) acp up (dbc) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 600 ma, p out = 48.45dbm, 3gpp wcdma signal, par = 10 db return loss acp up c192908fc_g3 0 20 40 60 5 10 15 20 28 32 36 40 44 48 52 56 60 efficiency (%) gain (db) output power (dbm) pulsed cw performance v dd = 28 v, i dq = 600ma 1930 mhz 1960 mhz 1990 mhz efficiency gain c192908fc_g5 -60 -50 -40 -30 -20 25 30 35 40 45 50 55 acp up & low (dbc) average output power (dbm) single - carrier wcdma 3gpp drive - up v dd = 28 v, i dq = 600 ma, 3gpp wcdma signal, par = 10 db, 10 mhz carrier spacing, bw = 3.84 mhz 1930 acpl 1930 acpu 1960 acpl 1960 acpu 1990 acpl 1990 acpu c192908fc_g4
data sheet 4 of 9 rev. 02.2, 2015-07-14 PXAC192908FV typical performance (cont.) load pull performance main side load pull performance C pulsed cw signal: 16 s, 10% duty cycle, v dd = 28 v, i dq = 600 ma p 1db max output power max pae freq [mhz] zs [ w] zl [ w ] gain [db] p out [dbm] p out [w] pae [%] zl [ w ] gain [db] p out [dbm] p out [w] pae [%] 1930 8.0 C j11.0 2.1 C j4.7 18.0 51.10 128.8 50.4 3.6 C j2.7 20.2 50.12 102.8 62.5 1960 11.9 C j11.9 2.1 C j4.7 18.2 51.10 128.8 51.0 3.6 C j2.9 20.2 50.08 101.9 61.6 1990 18.0 C j10.4 2.1 C j4.8 18.3 50.91 123.3 49.7 3.63 C j2.6 20.5 49.78 95.1 61.3 peak side load pull performance C pulsed cw signal: 16 s, 10% duty cycle, v dd =28 v, i dq = 90 ma p 1db max output power max pae freq [mhz] zs [ w] zl [ w ] gain [db] p out [dbm] p out [w] pae [%] zl [ w ] gain [db] p out [dbm] p out [w] pae [%] 1930 1.7 C j5.3 5.3 C j3.8 18.0 54.24 265.5 55.6 2.9 C j2.0 19.6 53.04 201.4 66.3 1960 2.0 C j5.8 5.3 C j3.7 18.4 54.16 260.6 55.7 2.9 C j2.2 20.1 52.90 195.0 66.0 1990 3.2 C j6.9 6.3 C j2.8 18.7 54.08 255.9 54.7 2.9 C j2.2 20.3 52.88 194.1 65.0 -18 -14 -10 -6 -2 12 14 16 18 20 1750 1800 1850 1900 1950 2000 2050 input return loss (db) gain (db) frequency (mhz) small signal cw performance gain & input return loss v dd = 28 v, i dq = 750 ma irl gain c192908fc_g7 0 20 40 60 5 10 15 20 28 36 44 52 60 efficiency (%) gain (db) output power (dbm) pulsed cw performance at various v dd i dq = 600 ma, ? = 1990 mhz v dd = 24 v v dd = 28 v v dd = 32 v gain efficiency c192908fc_g6
PXAC192908FV data sheet 5 of 9 rev. 02.2, 2015-07-14 reference circuit , 1930 C 1990 mhz reference circuit assembly diagram (not to scale) rf in rf out + ro 4350 _0 .508 (194 ) pxac 192908fv_out _04_d pxac 192908fv _in_04_d ro4350 _0 .508 (61) s 1 c102 s 3 s 2 c101 c103 c105 c104 c106 c108 c 107 c109 r 102 r 101 r 103 c205 c 204 c206 c 208 c 207 r 801 r 803 c 202 c803 s 4 c801 c802 u 1 r 107 r 105 r 104 r 106 c20 1 c 20 3 c2 13 c2 14 c2 16 c2 15 c209 c211 c 212 c210 c21 7 c2 29 c 2 30 c 2 21 c2 20 c2 28 c2 31 c 2 32 c2 2 4 c2 23 c2 25 c2 26 c2 22 c2 18 c2 19 c2 27 p x a c 1 9 2 9 0 8 f v _ c d _ 1 2 - 0 9 - 2 0 1 4 c110
data sheet 6 of 9 rev. 02.2, 2015-07-14 PXAC192908FV reference circuit (cont.) reference circuit assembly dut PXAC192908FV v1 test fixture part no. lta/PXAC192908FV v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 1930 C 1990 mhz find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower components information component description suggested manufacturer p/n input c101, c108, c105 capacitor, 18 pf atc atc600f180jt250x c102, c109 capacitor, 10 f murata lll31bc70g106ma01l c103 capacitor, 1 pf atc atc600f1r0ct250x c104 capacitor, 1.2 pf atc atc600a1r2ct250x c106 capacitor, 0.5 pf atc atc600f0r5ct250x c107 capacitor, 1.1 pf atc atc600f1r1ct250x c801, c802, c803 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101, r104 resistor, 5600 w panasonic electronic components erj-8rqj5r6v r102, r105 resistor, 1000 w panasonic electronic components erj-8geyj102v r103, r106 resistor, 5.1 w panasonic electronic components erj-8geyj5r1v r107 resistor, 50 w richardson c16a50z4 r801 resistor, 1300 w panasonic electronic components erj-3geyj132v r802 resistor, 1200 w panasonic electronic components erj-3geyj122v r803 resistor, 5100 w panasonic electronic components erj-8geyj512v s1 voltage regulator texas instruments lm78l05acm s2 transistor infneon technologies bcp56 s3, s4 potentiometer, 2k w bourns inc. 3224w-1-202e u1 hybrid coupler anaren x3c19p1-04s output c201, c202, c203, c204, c205, c206, c207, c208, c209, c210, c211, c212, c213, c214, c215, c216 capacitor, 10 f taiyo yuden umk325c7106mm-t c217, c224, c225, c227, c228 capacitor, 18 pf atc atc600f180jt250x c218 capacitor, 0.5 pf atc atc600f0r5ct250x c219 capacitor, 1.8 pf atc atc600f1r8ct250x c220 capacitor, 0.8 pf atc atc600f0r8ct250x c221 capacitor, 0.4 pf atc atc600f0r4ct250x c222, c226 capacitor, 0.2 pf atc atc600f0r2ct250x c223 capacitor, 1.0 pf atc atc600f1r0ct250x c229, c230, c231, 232 capacitor, 220 f panasonic electronic components eee-fp1v221ap
PXAC192908FV data sheet 7 of 9 rev. 02.2, 2015-07-14 pinout diagram (top view) lead connections for PXAC192908FV pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (fange) main peak v2 v1 d2 d1 g1 g2 s h - 34275 g - 6 - 2 _pd _10 - 10 - 2012
data sheet 8 of 9 rev. 02.2, 2015-07-14 PXAC192908FV find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower package outline specifications package h-37275g-6/2 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source; v1, v2 C v dd . 5. lead thickness: 0.13 + 0.051/C0.025 mm [0.005+0.002/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. (1.63 [0. 064 ]) 4. 58 +0 . 25 - 0. 13 [ . 180 +. 010 - . 005 ] 32 . 26 [1 . 270 ] 31 . 24 0. 28 [1. 230 . 011 ] c l s sph 2 . 134 [. 084 ] h - 37275 g - 6 / 2 _sl _po _03 _07 - 25 - 2013 2x 45 x . 64 [. 025 ] v 2 2x 2.29 [. 090 ] ( 13. 72 [. 540 ]) 2 x 2.22 [. 087 ] 30. 61 [1. 205 ] 2x (1.27 [. 050 ]) 2x 30 l c c l l c 4x r0 . 51 +. 38 - . 13 [ r . 020 +. 015 - . 005 ] 4x 12 . 45 [. 490 ] c l g1 g 2 d2 d 1 v1 2x 26 . 16 [1. 030 ] ( 18. 24 [. 718 ]) 10. 16 [. 400 ] 6 x 4. 04 0.51 [. 159 . 020 ] 9. 14 [. 360 ] d
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